We have been focusing on providing solutions and enhancements to Perkin-Elmer Sputtering Systems including Perkin-ElmerPE4400, PE 4410, PE 4450, PE 4480, PE 2400 Series. These OEM Sputter Coating systems have been used in production and R&D since 1980"s and 1990's. They have been proven to be a true "work horse".
Please contact us by e-mail ( [email protected]) to check whether the fully refurbished and upgraded Perkin-ELmer PE 4410 Sputter Deposition is available.
Perkin-Elmer Sputtering Deposition Download Information PDFWORD
THE DELTA CATHODE SYSTEM:MODEL 4410
Perkin-Elmer's Model 4410 delta cathode production sputtering system is designed for high yield in production environments demanding maximum throughput for metal deposition. It also provide a high level of flexibility in process control for other materials.
The 4410 uses a delta-shaped cathode that eliminate the need for a large-area uniformity-shaping aperture. This dramatically increases throughput while maintaining high wafer-to-wafer uniformity.
Contrasted with circular cathodes, target utilization is substantially higher. Up to 35% of the target can be sputtered before target change, and some 60% of the sputtered material actually reaches the substrate pallet. This results in a lower cost per wafer and less frequent target changes. Up to three delta or 8-inch round targets may be installed for sequential deposition of three different materials without breaking vacuum.
The 4410 employs a fast cycle load lock, two-stage cryopump and full flood Meissner trap to maintain the process chamber at high vacuum and in a clean condition at all times. The process chamber is fabricated of stainless steel for contamination-free performance. A base pressure better than 5 X 10-7 Torr is achieved within 3.5 minutes from loading substrates into the load lock. Typical cycle time, with optional load lock heating and pumping, is 12 to 15 minutes for the deposition of 1 micron of aluminum.
System Highlights
nHigh rate delta DC magnetron sputtering: Aluminum and aluminum alloys can be sputter deposited at rates in excess of 1800 ? /min, with loads of thirty 3-inch or thirteen 4-inch wafers.
nHigh throughput operation: Automated load lock and controller sequences provide for efficient pump-down and pallet transfer to process chamber, maximizing throughput.
nThe right sputter mode for each application: Sputter deposit, 0-10% RF bias sputter. DC bias sputter, sputter etch to 2 kw, RF magnetron, RF diode, DC delta magnetron.
nUltra-clean vacuum: Cryopump and Meissner-trapped process chamber ensures contamination-free conditions especially important for critical processes such as the deposition of aluminum and platinum.
nDesigned for operator safety: Two-button operation initiates pump-down and load sequence. Safety interlocks on DC and RF suppliers.
nEasy maintenance: Removable deposition shields permits easy system cleaning. Automatic cryopump regeneration minimized downtime and inconvenience.
nKey function clearly displayed: Valve position and system status are continuously displayed by quick-reading LEDs on front panels.
nA fail-safe system: Water flow switches on cathodes, matching network and vacuum system automatically shut the system down in case of cooling system failure.